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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC6026CTGRTPL3. It has typical 12 weeks of manufacturer standard lead time. Base Part Number: rn1311. It features bipolar (bjt) transistor npn 50v 100ma 60mhz 100mw surface mount cst3. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 60mhz. The product is available in surface mount configuration. The 250mv @ 10ma, 100ma is the maximum Vce saturation. cst3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 100mw. Moreover, the product comes in sc-101, sot-883. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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