Dimensions:
6.73 x 7.49 x 2.38mm
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Collector Cut-off Current:
250mA
Width:
7.49mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
4 A
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
700 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Emitter Base Voltage:
5 V
Length:
6.73mm
Pin Count:
3
Minimum DC Current Gain:
2000
Mounting Type:
Surface Mount
Maximum Power Dissipation:
45 W
Maximum Collector Emitter Voltage:
350 V
Height:
2.38mm
Minimum Operating Temperature:
-65 °C
Manufacturer Standard Lead Time:
28 Weeks
Base Part Number:
NJD35
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 350V 4A 90MHz 45W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 2A, 2V
Transistor Type:
NPN - Darlington
Frequency - Transition:
90MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 20mA, 2A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Cut Tape (CT)
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
45W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
50µA
Manufacturer:
ON Semiconductor
