Microsemi Corporation JANTX2N6298

JANTX2N6298 Microsemi Corporation
Microsemi Corporation

Product Information

Current - Collector (Ic) (Max):
8A
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 60V 8A 64W Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 4A, 3V
Transistor Type:
PNP - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 80mA, 8A
Series:
Military, MIL-PRF-19500/540
Package / Case:
TO-213AA, TO-66-2
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 175°C (TJ)
Power - Max:
64W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
500µA
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTX2N6298. The maximum collector current includes 8a. It features bipolar (bjt) transistor pnp - darlington 60v 8a 64w through hole. Furthermore, 750 @ 4a, 3v is the minimum DC current gain at given voltage. The transistor is a pnp - darlington type. The product is available in through hole configuration. The 2v @ 80ma, 8a is the maximum Vce saturation. The product military, mil-prf-19500/540, is a highly preferred choice for users. Moreover, the product comes in to-213aa, to-66-2. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 64w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 500µa is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.

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FAQs

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