ON Semiconductor NSS1C200MZ4T3G

NSS1C200MZ4T3G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
24 Weeks
Current - Collector (Ic) (Max):
2A
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 500mA, 2V
Transistor Type:
PNP
Frequency - Transition:
120MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
220mV @ 200mA, 2A
Standard Package:
4,000
Supplier Device Package:
SOT-223
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
800mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-261-4, TO-261AA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NSS1C200MZ4T3G. It has typical 24 weeks of manufacturer standard lead time. The maximum collector current includes 2a. Furthermore, 120 @ 500ma, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 120mhz. The product is available in surface mount configuration. The 220mv @ 200ma, 2a is the maximum Vce saturation. It is available in the standard package of 4,000. sot-223 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 800mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in to-261-4, to-261aa. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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NSS1C200MZ4(Datasheets)
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Wire Bond 01/Dec/2010(PCN Design/Specification)

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