ON Semiconductor NSS30201MR6T1G

NSS30201MR6T1G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NSS30201
Detailed Description:
Bipolar (BJT) Transistor NPN 30V 2A 300MHz 535mW Surface Mount 6-TSOP
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 500mA, 5V
Transistor Type:
NPN
Frequency - Transition:
300MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
75mV @ 1mA, 100mA
Supplier Device Package:
6-TSOP
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
535mW
Customer Reference:
Package / Case:
SOT-23-6
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NSS30201MR6T1G. Base Part Number: nss30201. It features bipolar (bjt) transistor npn 30v 2a 300mhz 535mw surface mount 6-tsop. Furthermore, 300 @ 500ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 300mhz. The product is available in surface mount configuration. The 75mv @ 1ma, 100ma is the maximum Vce saturation. 6-tsop is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 535mw. Moreover, the product comes in sot-23-6. The maximum collector current includes 2a. In addition, 100na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Devices 04/Aug/2017(PCN Assembly/Origin)
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NSS30201MR6T1G(Datasheets)
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Copper Wire 08/Jun/2009(PCN Design/Specification)

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