Central Semiconductor Corp 2N3584

2N3584 Central Semiconductor Corp
Central Semiconductor Corp

Product Information

Manufacturer Standard Lead Time:
22 Weeks
Current - Collector (Ic) (Max):
2A
Detailed Description:
Bipolar (BJT) Transistor NPN 250V 2A 10MHz 35W Through Hole TO-66
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 1A, 10V
Transistor Type:
NPN
Frequency - Transition:
10MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
750mV @ 125mA, 1A
Supplier Device Package:
TO-66
Voltage - Collector Emitter Breakdown (Max):
250V
Packaging:
Tube
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
35W
Package / Case:
TO-213AA, TO-66-2
Current - Collector Cutoff (Max):
5mA
Manufacturer:
Central Semiconductor Corp
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This is manufactured by Central Semiconductor Corp. The manufacturer part number is 2N3584. It has typical 22 weeks of manufacturer standard lead time. The maximum collector current includes 2a. It features bipolar (bjt) transistor npn 250v 2a 10mhz 35w through hole to-66. Furthermore, 25 @ 1a, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 10mhz. The product is available in through hole configuration. The 750mv @ 125ma, 1a is the maximum Vce saturation. to-66 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 250v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 35w. Moreover, the product comes in to-213aa, to-66-2. In addition, 5ma is the maximum current at collector cutoff. The central semiconductor corp's product offers user-desired applications.

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2N3583 thru 2N3585(Datasheets)
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CP319 Wafer Chg 3/Mar/2016(PCN Design/Specification)
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RoHS3 Cert(Environmental Information)

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FAQs

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