Minimum DC Current Gain:
400
Transistor Type:
NPN
Dimensions:
38.86 x 26.67 x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Maximum Continuous Collector Current:
50 A
Maximum Collector Base Voltage:
120 V
Maximum Collector Emitter Voltage:
120 V
Maximum Base Emitter Saturation Voltage:
4.5 V
Height:
8.51mm
Width:
26.67mm
Length:
38.86mm
Package Type:
TO-204
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
3.5 V
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
21 Weeks
Base Part Number:
MJ11032
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 120V 50A 300W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 25A, 5V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 500mA, 50A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
120V
Packaging:
Tray
Operating Temperature:
-55°C ~ 200°C (TJ)
Power - Max:
300W
Customer Reference:
Package / Case:
TO-204AE
Current - Collector (Ic) (Max):
50A
Current - Collector Cutoff (Max):
2mA
Manufacturer:
ON Semiconductor
