Dimensions:
11.04 x 7.74 x 2.66mm
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Cut-off Current:
100µA
Width:
7.74mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
4 A
Package Type:
TO-225AA
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
80 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Emitter Base Voltage:
5 V
Length:
11.04mm
Pin Count:
3
Minimum DC Current Gain:
100
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Emitter Voltage:
80 V
Height:
2.66mm
Minimum Operating Temperature:
-65 °C
Manufacturer Standard Lead Time:
25 Weeks
Base Part Number:
2N6039
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 2A, 3V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
