ON Semiconductor MMBT4401WT1G

MMBT4401WT1G ON Semiconductor
ON Semiconductor

Product Information

The MMBT4401WT1G is a high-geared NPN bipolar transistor built for use in versatile electronic applications. Its compact layout and efficient functionality make it a preferred selection for many circuits, ensuring consistent performance and enhanced device functionality.

Minimum DC Current Gain:
20
Transistor Type:
NPN
Dimensions:
2.2 x 1.35 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 mW
Maximum Continuous Collector Current:
600 mA
Maximum Collector Emitter Voltage:
40 V dc
Maximum Base Emitter Saturation Voltage:
1.2 V dc
Height:
0.9mm
Width:
1.35mm
Length:
2.2mm
Package Type:
SC-70
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
0.75 V dc
Maximum Emitter Base Voltage:
6 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
27 Weeks
Base Part Number:
MMBT4401
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 150mW Surface Mount SC-70-3 (SOT323)
Transistor Type:
NPN
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
750mV @ 50mA, 500mA
Supplier Device Package:
SC-70-3 (SOT323)
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
150mW
Customer Reference:
Package / Case:
SC-70, SOT-323
Current - Collector (Ic) (Max):
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 1V
Manufacturer:
ON Semiconductor
RoHs Compliant
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The MMBT4401WT1G is a refined NPN BJT transistor widely utilised for small-signal amplification in electronic circuits. It comes in a compact SOT-23 surface-mount package, making it suitable for applications with limited board space. Its excellent switching speeds and low noise make it perfect for numerous electronic circuits.

  • Excellent Switching Speeds and Low Noise:

The MMBT4401WT1G transistor exhibits excellent switching speeds, enabling fast response times in switching applications. It has low noise characteristics, which is beneficial in signal-sensitive circuits where minimising noise interference is crucial.

  • High Voltage and Current Handling Capability:

Despite its small size, the MMBT4401WT1G transistor can handle relatively high voltage and current levels. With a maximum collector-emitter voltage (VCEO) of 40 volts and a continuous collector current (IC) of 600 mA, this transistor is well-suited for various low to moderate-power applications.

General-Purpose Transistor with Wide Application Range:

The MMBT4401WT1G is a general-purpose transistor that finds applications in various electronic circuits, including:

  • Amplifiers: It is used in small-signal amplifiers to boost the strength of weak signals, commonly found in audio amplifiers and sensor circuits.
  • Switching Circuits: The transistor's ability to handle moderate currents and voltages makes it suitable for switching applications, such as relay drivers and digital logic circuits.
  • Voltage Regulation: It is utilised in voltage regulation circuits to stabilise and control voltage levels in power supply systems.
  • Oscillators: The transistor can be operated in oscillator circuits to produce high-frequency signals for many electronic systems.

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Datasheet MMBT4401WT1G(Technical Reference)
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MMBT4401WT1(Datasheets)
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Copper Wire 19/May/2010(PCN Design/Specification)
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Mult Dev 05/Dec/2019(PCN Assembly/Origin)

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