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This is manufactured by Microsemi Corporation. The manufacturer part number is 2N3251A. The maximum collector current includes 200ma. It features bipolar (bjt) transistor pnp 60v 200ma 360mw through hole to-39 (to-205ad). Furthermore, 100 @ 10ma, 1v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 500mv @ 5ma, 50ma is the maximum Vce saturation. to-39 (to-205ad) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 360mw. Moreover, the product comes in to-205ad, to-39-3 metal can. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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