Minimum DC Current Gain:
750
Transistor Type:
NPN
Dimensions:
7.74 x 2.66 x 11.04mm
Mounting Type:
Through Hole
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
4 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Collector Cut-off Current:
0.2mA
Height:
11.04mm
Width:
2.66mm
Length:
7.74mm
Package Type:
TO-225
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
2.5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
28 Weeks
Base Part Number:
BD681
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 4A 40W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 1.5A, 3V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 30mA, 1.5A
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
500µA
Manufacturer:
ON Semiconductor
