Minimum DC Current Gain:
15
Transistor Type:
PNP
Dimensions:
10.8 x 7.8 x 2.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
36 W
Maximum Collector Emitter Saturation Voltage:
0.8 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
3 MHz
Height:
10.8mm
Width:
2.7mm
Length:
7.8mm
Package Type:
SOT-32
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum DC Collector Current:
4 A
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
4 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 500mA, 1V
edacadModel:
BD442 Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
800mV @ 200mA, 2A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/2827180
Transistor Type:
PNP
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
SOT-32
Power - Max:
36 W
Base Product Number:
BD442
ECCN:
EAR99
