ON Semiconductor NSS60201LT1G

NSS60201LT1G ON Semiconductor
ON Semiconductor

Product Information

Dimensions:
3.04 x 1.4 x 1.01mm
Maximum Collector Emitter Saturation Voltage:
0.14 V
Width:
1.4mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Continuous Collector Current:
2 A
Package Type:
SOT-23
Number of Elements per Chip:
1
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Base Emitter Saturation Voltage:
0.9 V
Maximum Emitter Base Voltage:
8 V dc
Length:
3.04mm
Pin Count:
3
Minimum DC Current Gain:
100
Mounting Type:
Surface Mount
Maximum Power Dissipation:
710 mW
Maximum Collector Emitter Voltage:
60 V dc
Height:
1.01mm
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
36 Weeks
Base Part Number:
NSS60201
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 2A 100MHz 460mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 1A, 2V
Transistor Type:
NPN
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
140mV @ 200mA, 2A
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
460mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NSS60201LT1G. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product has a maximum 0.14 v collector emitter saturation voltage . Furthermore, the product is 1.4mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. The product has a maximum 2 a continuous collector current . The package is a sort of sot-23. It consists of 1 elements per chip. The product is available in single configuration. It has a maximum operating temperature of +150 °c. The transistor is a npn type. In addition, the product has a maximum 0.9 v base emitter saturation voltage . It features a 8 v dc of maximum emitter base voltage. Its accurate length is 3.04mm. It contains 3 pins. It features up to 100 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 710 mw maximum power dissipation. Whereas features a 60 v dc of collector emitter voltage (max). In addition, the height is 1.01mm. Whereas, the minimum operating temperature of the product is -55 °c. It has typical 36 weeks of manufacturer standard lead time. Base Part Number: nss60201. It features bipolar (bjt) transistor npn 60v 2a 100mhz 460mw surface mount sot-23-3 (to-236). Furthermore, 150 @ 1a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 140mv @ 200ma, 2a is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 460mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 2a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet NSS60201LT1G(Technical Reference)
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NSS60201LT1G(Datasheets)
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SOT23 16/Sep/2016(PCN Design/Specification)

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