ON Semiconductor 2N5657G

2N5657G ON Semiconductor
2N5657G
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
2N5657
Detailed Description:
Bipolar (BJT) Transistor NPN 350V 500mA 10MHz 20W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 100mA, 10V
Transistor Type:
NPN
Frequency - Transition:
10MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
10V @ 100mA, 500mA
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
20W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2N5657G. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: 2n5657. It features bipolar (bjt) transistor npn 350v 500ma 10mhz 20w through hole to-225aa. Furthermore, 30 @ 100ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 10mhz. The product is available in through hole configuration. The 10v @ 100ma, 500ma is the maximum Vce saturation. to-225aa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 350v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 20w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 500ma. In addition, 100µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Assembly Change 28/Dec/2020(PCN Assembly/Origin)
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2N5655, 5657(Datasheets)

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