Dimensions:
15.2 x 4.9 x 20.35mm
Maximum Collector Emitter Saturation Voltage:
4 V dc
Maximum Collector Cut-off Current:
0.7mA
Width:
4.9mm
Base Current:
3A
Transistor Configuration:
Single
Maximum Continuous Collector Current:
10 (Continuous) A, 15 (Peak) A
Package Type:
TO-218
Number of Elements per Chip:
1
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
100 V dc
Maximum Emitter Base Voltage:
5 V dc
Length:
15.2mm
Pin Count:
3
Minimum DC Current Gain:
20
Mounting Type:
Through Hole
Maximum Power Dissipation:
80 W
Maximum Collector Emitter Voltage:
100 V dc
Height:
20.35mm
Minimum Operating Temperature:
-65 °C
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
TIP33
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 10A 3MHz 80W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 3A, 4V
Transistor Type:
NPN
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 2.5A, 10A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
80W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
700µA
Manufacturer:
ON Semiconductor
