ON Semiconductor MJD32T4G

MJD32T4G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
MJD32
Detailed Description:
Bipolar (BJT) Transistor PNP 40V 3A 3MHz 1.56W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 3A, 4V
Transistor Type:
PNP
Frequency - Transition:
3MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 375mA, 3A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.56W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
50µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJD32T4G. It has typical 12 weeks of manufacturer standard lead time. Base Part Number: mjd32. It features bipolar (bjt) transistor pnp 40v 3a 3mhz 1.56w surface mount dpak. Furthermore, 10 @ 3a, 4v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 3mhz. The product is available in surface mount configuration. The 1.2v @ 375ma, 3a is the maximum Vce saturation. dpak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, cut tape (ct) is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.56w. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector current includes 3a. In addition, 50µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Devices 29/Aug/2017(PCN Assembly/Origin)
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MJD31 (NPN), MJD32 (PNP)(Datasheets)

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