Minimum DC Current Gain:
180
Transistor Type:
NPN
Dimensions:
2 x 2 x 0.75mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.5 W
Maximum Continuous Collector Current:
5 A
Maximum Collector Emitter Voltage:
20 V dc
Maximum Base Emitter Saturation Voltage:
0.9 V
Height:
0.75mm
Width:
2mm
Length:
2mm
Package Type:
WDFN
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
0.13 V
Maximum Emitter Base Voltage:
6 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
NSS20501
Detailed Description:
Bipolar (BJT) Transistor NPN 20V 5A 150MHz 875mW Surface Mount 3-WDFN (2x2)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2A, 2V
Transistor Type:
NPN
Frequency - Transition:
150MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
125mV @ 400mA, 4A
Supplier Device Package:
3-WDFN (2x2)
Voltage - Collector Emitter Breakdown (Max):
20V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
875mW
Customer Reference:
Package / Case:
3-WDFN Exposed Pad
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
