Transistor Type:
NPN
Dimensions:
6.73 x 6.22 x 2.38mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Saturation Voltage:
8 V
Maximum Collector Base Voltage:
70 V
Maximum Collector Emitter Voltage:
60 V
Maximum Operating Frequency:
500 kHz
Maximum Emitter Base Voltage:
5 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum DC Collector Current:
10 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Base Part Number:
MJD3055
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 10A 2MHz 1.75W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Transistor Type:
NPN
Frequency - Transition:
2MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
8V @ 3.3A, 10A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
50µA
Manufacturer:
ON Semiconductor
