Minimum DC Current Gain:
15
Transistor Type:
PNP
Dimensions:
10.53 x 4.83 x 9.28mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
90 W
Maximum Continuous Collector Current:
10 A
Maximum Collector Emitter Voltage:
80 V dc
Height:
9.28mm
Width:
4.83mm
Length:
10.53mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
1.1 V dc
Maximum Emitter Base Voltage:
5 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BD810
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 10A 1.5MHz 90W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 4A, 2V
Transistor Type:
PNP
Frequency - Transition:
1.5MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.1V @ 300mA, 3A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
90W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
1mA (ICBO)
Manufacturer:
ON Semiconductor
