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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1962-O(Q). The maximum collector current includes 15 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. Furthermore, 80 @ 1a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. The 3v @ 800ma, 8a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 230 v. The transistor is a pnp type. It is shipped in tray package . Its typical moisture sensitivity level is not applicable. In addition, 5µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-3p(n) is the supplier device package value. The maximum power of the product is 130 w. Moreover, it corresponds to 2sa1962, a base product number of the product. The product is designated with the ear99 code number.
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