Minimum DC Current Gain:
35
Transistor Type:
PNP
Dimensions:
15.6 x 4.8 x 19.9mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
120 W
Maximum Collector Emitter Saturation Voltage:
-2 V
Maximum Collector Base Voltage:
-160 V
Maximum Collector Emitter Voltage:
-140 V
Maximum Operating Frequency:
1 MHz
Height:
19.9mm
Width:
4.8mm
Length:
15.6mm
Package Type:
TO
Number of Elements per Chip:
1
Maximum DC Collector Current:
12 A
Maximum Emitter Base Voltage:
-6 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2SB817
Detailed Description:
Bipolar (BJT) Transistor PNP 140V 12A 10MHz 120W Through Hole TO-3P-3L
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1A, 5V
Transistor Type:
PNP
Frequency - Transition:
10MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 500mA, 5A
Supplier Device Package:
TO-3P-3L
Voltage - Collector Emitter Breakdown (Max):
140V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
120W
Customer Reference:
Package / Case:
TO-3P-3, SC-65-3
Current - Collector (Ic) (Max):
12A
Current - Collector Cutoff (Max):
100µA (ICBO)
Manufacturer:
ON Semiconductor
