Microsemi Corporation JANTX2N1485

JANTX2N1485 Microsemi Corporation
Microsemi Corporation

Product Information

Current - Collector (Ic) (Max):
3A
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 3A 1.75W Through Hole TO-8
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 750mA, 4V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
750mV @ 40mA, 750mA
Series:
Military, MIL-PRF-19500/180
Package / Case:
TO-233AA, TO-8-3 Metal Can
Supplier Device Package:
TO-8
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
1.75W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
15µA (ICBO)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTX2N1485. The maximum collector current includes 3a. It features bipolar (bjt) transistor npn 40v 3a 1.75w through hole to-8. Furthermore, 35 @ 750ma, 4v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 750mv @ 40ma, 750ma is the maximum Vce saturation. The product military, mil-prf-19500/180, is a highly preferred choice for users. Moreover, the product comes in to-233aa, to-8-3 metal can. to-8 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1.75w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 15µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.

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FAQs

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