Transistor Type:
NPN
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
65 W
Maximum Collector Emitter Saturation Voltage:
1.5 V dc
Maximum Collector Base Voltage:
100 V dc
Maximum Collector Emitter Voltage:
100 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
6 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
21 Weeks
Base Part Number:
BD243
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 65W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 3A, 4V
Transistor Type:
NPN
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 1A, 6A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
65W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
6A
Current - Collector Cutoff (Max):
700µA
Manufacturer:
ON Semiconductor
