Microsemi Corporation JANTX2N5416S

JANTX2N5416S Microsemi Corporation
Microsemi Corporation

Product Information

Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
1A
Detailed Description:
Bipolar (BJT) Transistor PNP 300V 1A 750mW Through Hole TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 50mA, 10V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 5mA, 50mA
Series:
Military, MIL-PRF-19500/485
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
750mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
1mA
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTX2N5416S. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 1a. It features bipolar (bjt) transistor pnp 300v 1a 750mw through hole to-39. Furthermore, 30 @ 50ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 2v @ 5ma, 50ma is the maximum Vce saturation. The product military, mil-prf-19500/485, is a highly preferred choice for users. Moreover, the product comes in to-205ad, to-39-3 metal can. to-39 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 300v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 750mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 1ma is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.

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FAQs

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