Minimum DC Current Gain:
200
Transistor Type:
NPN
Dimensions:
4.5 x 2.5 x 1.5mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.3 W
Maximum Collector Emitter Saturation Voltage:
0.4 V
Maximum Collector Base Voltage:
120 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Operating Frequency:
1 MHz
Height:
1.5mm
Width:
2.5mm
Length:
4.5mm
Package Type:
PCP
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Emitter Base Voltage:
6 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2SC3646
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 1A 120MHz 500mW Surface Mount PCP
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 5V
Transistor Type:
NPN
Frequency - Transition:
120MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
400mV @ 40mA, 400mA
Supplier Device Package:
PCP
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
500mW
Customer Reference:
Package / Case:
TO-243AA
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
