Toshiba Semiconductor and Storage TTC5200(Q)

TTC5200-Q- Toshiba Semiconductor and Storage TTC5200(Q)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
15 A
HTSUS:
8541.29.0075
RoHS Status:
RoHS Compliant
Voltage - Collector Emitter Breakdown (Max):
230 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3PL
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 1A, 5V
edacadModel:
TTC5200(Q) Models
Frequency - Transition:
30MHz
Vce Saturation (Max) @ Ib, Ic:
3V @ 800mA, 8A
REACH Status:
Vendor Undefined
edacadModelUrl:
/en/models/2520938
Transistor Type:
NPN
Package:
Tray
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
15 Weeks
Current - Collector Cutoff (Max):
5µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(L)
Power - Max:
150 W
Base Product Number:
TTC5200
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TTC5200(Q). The maximum collector current includes 15 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs compliant. The maximum collector emitter breakdown voltage of the product is 230 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3pl. Furthermore, 80 @ 1a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. The 3v @ 800ma, 8a is the maximum Vce saturation. In addition, it is vendor undefined. The transistor is a npn type. It is shipped in tray package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 15 weeks standard lead time. In addition, 5µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-3p(l) is the supplier device package value. The maximum power of the product is 150 w. Moreover, it corresponds to ttc5200, a base product number of the product. The product is designated with the ear99 code number.

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