Transistor Type:
NPN
Dimensions:
11.04 x 7.74 x 2.66mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Maximum Collector Emitter Saturation Voltage:
0.6 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Base Emitter Saturation Voltage:
1.3 V
Maximum Operating Frequency:
3 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-225
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
15 Weeks
Base Part Number:
2N4923
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 1A 3MHz 30W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 500mA, 1V
Transistor Type:
NPN
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 100mA, 1A
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
30W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
500µA
Manufacturer:
ON Semiconductor
