Transistor Type:
NPN
Dimensions:
6.7 x 3.7 x 1.65mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
800 mW
Maximum Collector Emitter Saturation Voltage:
0.3 V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
0.9 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum DC Collector Current:
6 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
27 Weeks
Base Part Number:
NSS606
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 6A 100MHz 800mW Surface Mount SOT-223
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1A, 2V
Transistor Type:
NPN
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 600mA, 6A
Supplier Device Package:
SOT-223
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
800mW
Customer Reference:
Package / Case:
TO-261-4, TO-261AA
Current - Collector (Ic) (Max):
6A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
