Microsemi Corporation JANTX2N1711S

JANTX2N1711S Microsemi Corporation
Microsemi Corporation

Product Information

Current - Collector (Ic) (Max):
500mA
Detailed Description:
Bipolar (BJT) Transistor NPN 30V 500mA 800mW Through Hole TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 15mA, 150mA
Series:
Military, MIL-PRF-19500/225
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
800mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
10nA (ICBO)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTX2N1711S. The maximum collector current includes 500ma. It features bipolar (bjt) transistor npn 30v 500ma 800mw through hole to-39. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 1.5v @ 15ma, 150ma is the maximum Vce saturation. The product military, mil-prf-19500/225, is a highly preferred choice for users. Moreover, the product comes in to-205ad, to-39-3 metal can. to-39 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 800mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10na (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.

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FAQs

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