Transistor Type:
NPN
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
85 W
Maximum Collector Emitter Saturation Voltage:
1.5 V dc
Maximum Collector Base Voltage:
180 V dc
Maximum Collector Emitter Voltage:
90 V
Maximum Base Emitter Saturation Voltage:
2 V dc
Height:
15.75mm
Width:
4.82mm
Length:
10.28mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum DC Collector Current:
20 A
Maximum Emitter Base Voltage:
7 V
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
BUV26
Detailed Description:
Bipolar (BJT) Transistor NPN 90V 20A 85W Through Hole TO-220AB
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 1.2A, 12A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
90V
Packaging:
Tube
Operating Temperature:
-65°C ~ 175°C (TJ)
Power - Max:
85W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
20A
Manufacturer:
ON Semiconductor
