ON Semiconductor BSS63LT1G

BSS63LT1G ON Semiconductor
BSS63LT1G
BSS63LT1G
ON Semiconductor

Product Information

Transistor Type:
PNP
Dimensions:
3.04 x 1.4 x 1.11mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Emitter Saturation Voltage:
-250 mV
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
-900 mVdc
Maximum Operating Frequency:
95 MHz
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
BSS63
Detailed Description:
Bipolar (BJT) Transistor PNP 100V 100mA 95MHz 225mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 25mA, 1V
Transistor Type:
PNP
Frequency - Transition:
95MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
250mV @ 2.5mA, 25mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is BSS63LT1G. The transistor is a pnp type. The given dimensions of the product include 3.04 x 1.4 x 1.11mm. The product is available in surface mount configuration. Provides up to 225 mw maximum power dissipation. The product has a maximum -250 mv collector emitter saturation voltage . Whereas features a 100 v of collector emitter voltage (max). In addition, the product has a maximum -900 mvdc base emitter saturation voltage . It carries 95 mhz of maximum operating frequency. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 12 weeks of manufacturer standard lead time. Base Part Number: bss63. It features bipolar (bjt) transistor pnp 100v 100ma 95mhz 225mw surface mount sot-23-3 (to-236). Furthermore, 30 @ 25ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 95mhz. The 250mv @ 2.5ma, 25ma is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 225mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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BSS63LT1G, NSVBSS63LT1G(Datasheets)
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Glue Mount Process 11/July/2008(PCN Design/Specification)
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SOT23 16/Sep/2016(PCN Design/Specification)

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