ON Semiconductor NJVNJD35N04T4G

NJVNJD35N04T4G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
31 Weeks
Base Part Number:
NJD35
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 350V 4A 90MHz 45W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 2A, 2V
Transistor Type:
NPN - Darlington
Frequency - Transition:
90MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 20mA, 2A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Cut Tape (CT)
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
45W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
50µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NJVNJD35N04T4G. It has typical 31 weeks of manufacturer standard lead time. Base Part Number: njd35. It features bipolar (bjt) transistor npn - darlington 350v 4a 90mhz 45w surface mount dpak. Furthermore, 2000 @ 2a, 2v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 90mhz. The product is available in surface mount configuration. The 1.5v @ 20ma, 2a is the maximum Vce saturation. dpak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 350v. In addition, cut tape (ct) is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 45w. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector current includes 4a. In addition, 50µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mold Compound 16/Aug/2018(PCN Assembly/Origin)
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NJD35N04G,NJVNJD35N04x4G(Datasheets)

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