Dimensions:
16.26 x 5.3 x 21.08mm
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Cut-off Current:
5mA
Width:
5.3mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
20 A
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Emitter Base Voltage:
5 V
Length:
16.26mm
Pin Count:
3
Minimum DC Current Gain:
100
Mounting Type:
Through Hole
Maximum Power Dissipation:
160 W
Maximum Collector Emitter Voltage:
100 V
Height:
21.08mm
Minimum Operating Temperature:
-65 °C
Manufacturer Standard Lead Time:
34 Weeks
Base Part Number:
MJH6284
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 20A 4MHz 160W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 10A, 3V
Transistor Type:
NPN - Darlington
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 200mA, 20A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
160W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
20A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
