ON Semiconductor NJVMJD3055T4G

NJVMJD3055T4G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
36 Weeks
Base Part Number:
NJVMJD3055
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 10A 2MHz 1.75W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Transistor Type:
NPN
Frequency - Transition:
2MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
8V @ 3.3A, 10A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
50µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NJVMJD3055T4G. It has typical 36 weeks of manufacturer standard lead time. Base Part Number: njvmjd3055. It features bipolar (bjt) transistor npn 60v 10a 2mhz 1.75w surface mount dpak. Furthermore, 20 @ 4a, 4v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 2mhz. The product is available in surface mount configuration. The 8v @ 3.3a, 10a is the maximum Vce saturation. dpak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.75w. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector current includes 10a. In addition, 50µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mold Compound 16/Aug/2018(PCN Assembly/Origin)
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MJD2955, MJD3055(Datasheets)

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