Minimum DC Current Gain:
200
Transistor Type:
NPN
Dimensions:
2.9 x 1.6 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
900 mW
Maximum Collector Emitter Saturation Voltage:
150 mV
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
50 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Operating Frequency:
330 MHz
Height:
0.9mm
Width:
1.6mm
Length:
2.9mm
Package Type:
CPH
Number of Elements per Chip:
1
Maximum DC Collector Current:
5 A
Maximum Emitter Base Voltage:
6 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
CPH3212
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 5A 330MHz 900mW Surface Mount 3-CPH
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
Transistor Type:
NPN
Frequency - Transition:
330MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
150mV @ 40mA, 2A
Supplier Device Package:
3-CPH
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
900mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
