Dimensions:
21.08 x 16.26 x 5.3mm
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Cut-off Current:
2mA
Width:
16.26mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
10 A
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
3.5 V
Maximum Emitter Base Voltage:
5 V
Length:
21.08mm
Pin Count:
3
Minimum DC Current Gain:
500
Mounting Type:
Through Hole
Maximum Power Dissipation:
125 W
Maximum Collector Emitter Voltage:
60 V
Height:
5.3mm
Minimum Operating Temperature:
-65 °C
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
TIP140
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 60V 10A 125W Through Hole TO-247-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 5A, 4V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 10A
Supplier Device Package:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
125W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
2mA
Manufacturer:
ON Semiconductor
