Minimum DC Current Gain:
200
Transistor Type:
PNP
Dimensions:
2 x 1.6 x 0.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
800 mW
Maximum Collector Emitter Saturation Voltage:
250 mV
Maximum Collector Base Voltage:
50 V
Maximum Collector Emitter Voltage:
50 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Height:
0.83mm
Width:
1.6mm
Length:
2mm
Package Type:
MCPH
Number of Elements per Chip:
1
Maximum DC Collector Current:
2 A
Maximum Emitter Base Voltage:
6 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MCH3145
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 2A 420MHz 800mW Surface Mount 3-MCPH
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 2V
Transistor Type:
PNP
Frequency - Transition:
420MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
330mV @ 50mA, 1A
Supplier Device Package:
3-MCPH
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
800mW
Customer Reference:
Package / Case:
SC-70, SOT-323
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
