Transistor Type:
NPN
Dimensions:
7.8 x 3 x 11.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
15 W
Maximum Collector Emitter Saturation Voltage:
1.8 V dc
Maximum Collector Base Voltage:
25 V dc
Maximum Collector Emitter Voltage:
40 V dc
Maximum Base Emitter Saturation Voltage:
2.5 V dc
Maximum Operating Frequency:
10 MHz
Maximum Emitter Base Voltage:
8 V dc
Package Type:
TO-225
Number of Elements per Chip:
1
Maximum DC Collector Current:
5 (Continuous) A, 10 (Peak) A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
26 Weeks
Base Part Number:
MJE200
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 5A 65MHz 15W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
45 @ 2A, 1V
Transistor Type:
NPN
Frequency - Transition:
65MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.8V @ 1A, 5A
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
15W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
