Transistor Type:
NPN
Dimensions:
7.8 x 3 x 11.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
36 W
Maximum Collector Emitter Saturation Voltage:
0.8 V dc
Maximum Collector Base Voltage:
45 V dc
Maximum Collector Emitter Voltage:
45 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-225
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BD437
Detailed Description:
Bipolar (BJT) Transistor NPN 45V 4A 3MHz 36W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
85 @ 500mA, 1V
Transistor Type:
NPN
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
800mV @ 300mA, 3A
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
45V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
36W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
100µA (ICBO)
Manufacturer:
ON Semiconductor
