Transistor Type:
NPN
Dimensions:
10.53 x 4.83 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Maximum Collector Emitter Saturation Voltage:
1 V dc
Maximum Collector Base Voltage:
700 V dc
Maximum Collector Emitter Voltage:
400 V dc
Maximum Base Emitter Saturation Voltage:
1 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
12 V dc
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
5 (Continuous) A, 10 (Peak) A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BUL45
Detailed Description:
Bipolar (BJT) Transistor NPN 400V 5A 13MHz 75W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 2A, 1V
Transistor Type:
NPN
Frequency - Transition:
13MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 400mA, 2A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
75W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
