Minimum DC Current Gain:
1000
Transistor Type:
NPN
Dimensions:
10.63 x 4.9 x 16.12mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
2 W
Maximum Continuous Collector Current:
8 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Collector Cut-off Current:
10µA
Height:
16.12mm
Width:
4.9mm
Length:
10.63mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
3.5 V dc
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
30 Weeks
Base Part Number:
MJF122
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 5A 2W Through Hole TO-220FP
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 3A, 3V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 20mA, 5A
Supplier Device Package:
TO-220FP
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
10µA
Manufacturer:
ON Semiconductor
