Minimum DC Current Gain:
200
Transistor Type:
NPN
Dimensions:
10.53 x 4.83 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
80 W
Maximum Continuous Collector Current:
8 A
Maximum Collector Emitter Voltage:
80 V dc
Height:
15.75mm
Width:
4.83mm
Length:
10.53mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
2.5 V dc
Maximum Emitter Base Voltage:
5 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
TIP101
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 80V 8A 2W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 3A, 4V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 80mA, 8A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
50µA
Manufacturer:
ON Semiconductor
