Minimum DC Current Gain:
250
Transistor Type:
NPN
Dimensions:
10.28 x 4.82 x 9.28mm
Mounting Type:
Through Hole
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
15 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Collector Cut-off Current:
1mA
Height:
9.28mm
Width:
4.82mm
Length:
10.28mm
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BDW42
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 15A 4MHz 85W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 5A, 4V
Transistor Type:
NPN - Darlington
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 50mA, 10A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
85W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
2mA
Manufacturer:
ON Semiconductor
