ON Semiconductor 2SC5566-TD-E

2SC5566-TD-E ON Semiconductor
2SC5566-TD-E
2SC5566-TD-E
ET10911369
ET10911369
Transistors - Bipolar (BJT) - Single
Transistors - Bipolar (BJT) - Single
2SC5566-TD-E ON SemiconductorON Semiconductor
ON Semiconductor

Product Information

Dimensions:
4.5 x 2.5 x 1.5mm
Maximum Collector Emitter Saturation Voltage:
225 mV
Width:
2.5mm
Transistor Configuration:
Single
Maximum Operating Frequency:
1 MHz
Package Type:
PCP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Emitter Base Voltage:
6 V
Length:
4.5mm
Maximum DC Collector Current:
4 A
Pin Count:
3
Minimum DC Current Gain:
200
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.5 W
Maximum Collector Emitter Voltage:
50 V
Height:
1.5mm
Manufacturer Standard Lead Time:
17 Weeks
Base Part Number:
2SC5566
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 4A 400MHz 1.3W Surface Mount PCP
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
Transistor Type:
NPN
Frequency - Transition:
400MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
225mV @ 100mA, 2A
Supplier Device Package:
PCP
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
1.3W
Customer Reference:
Package / Case:
TO-243AA
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is 2SC5566-TD-E. The given dimensions of the product include 4.5 x 2.5 x 1.5mm. The product has a maximum 225 mv collector emitter saturation voltage . Furthermore, the product is 2.5mm wide. The product offers single transistor configuration. It carries 1 mhz of maximum operating frequency. The package is a sort of pcp. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 100 v maximum collector base voltage. In addition, the product has a maximum 1.2 v base emitter saturation voltage . It features a 6 v of maximum emitter base voltage. Its accurate length is 4.5mm. Moreover, it has a maximum DC collector current of 4 a. It contains 3 pins. It features up to 200 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 3.5 w maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). In addition, the height is 1.5mm. It has typical 17 weeks of manufacturer standard lead time. Base Part Number: 2sc5566. It features bipolar (bjt) transistor npn 50v 4a 400mhz 1.3w surface mount pcp. Furthermore, 200 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 400mhz. The 225mv @ 100ma, 2a is the maximum Vce saturation. pcp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1.3w. Moreover, the product comes in to-243aa. The maximum collector current includes 4a. In addition, 1µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

pdf icon
Datasheet(Technical Reference)
pdf icon
2SA2013/2SC5566(Datasheets)

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FAQs

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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