Minimum DC Current Gain:
20
Transistor Type:
PNP
Dimensions:
6.7 x 3.7 x 1.65mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.75 W
Maximum Collector Base Voltage:
300 V dc
Maximum Collector Emitter Voltage:
300 V
Height:
1.65mm
Width:
3.7mm
Length:
6.7mm
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
500 mA
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MMJT350
Detailed Description:
Bipolar (BJT) Transistor PNP 300V 500mA 650mW Surface Mount SOT-223
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 50mA, 10V
Transistor Type:
PNP
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
500mA
Supplier Device Package:
SOT-223
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
650mW
Customer Reference:
Package / Case:
TO-261-4, TO-261AA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
