ON Semiconductor 2SB1203T-H

2SB1203T-H ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
2SB1203
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 5A 130MHz 1W Through Hole TP
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
Transistor Type:
PNP
Frequency - Transition:
130MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
550mV @ 150mA, 3A
Supplier Device Package:
TP
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2SB1203T-H. Base Part Number: 2sb1203. It features bipolar (bjt) transistor pnp 50v 5a 130mhz 1w through hole tp. Furthermore, 200 @ 500ma, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 130mhz. The product is available in through hole configuration. The 550mv @ 150ma, 3a is the maximum Vce saturation. tp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum collector current includes 5a. In addition, 1µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Devices EOL 26/Jul/2018(PCN Obsolescence/ EOL)
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2SB1203/2SD1803(Datasheets)

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