Minimum DC Current Gain:
10
Transistor Type:
NPN
Dimensions:
10.53 x 4.83 x 9.28mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Continuous Collector Current:
3 A
Maximum Collector Emitter Voltage:
115 V dc
Height:
9.28mm
Width:
4.83mm
Length:
10.53mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
1.2 V dc
Maximum Emitter Base Voltage:
5 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BD241
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 40W Through Hole TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 1A, 4V
Transistor Type:
NPN
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 600mA, 3A
Supplier Device Package:
TO-220
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
300µA
Manufacturer:
ON Semiconductor
