ON Semiconductor NJVMJD350T4G

NJVMJD350T4G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NJVMJD350
Detailed Description:
Bipolar (BJT) Transistor PNP 300V 500mA 10MHz 1.56W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 50mA, 10V
Transistor Type:
PNP
Frequency - Transition:
10MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1V @ 10mA, 100mA
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Cut Tape (CT)
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.56W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NJVMJD350T4G. Base Part Number: njvmjd350. It features bipolar (bjt) transistor pnp 300v 500ma 10mhz 1.56w surface mount dpak. Furthermore, 30 @ 50ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 10mhz. The product is available in surface mount configuration. The 1v @ 10ma, 100ma is the maximum Vce saturation. dpak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 300v. In addition, cut tape (ct) is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.56w. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector current includes 500ma. In addition, 100µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mold Compound 16/Aug/2018(PCN Assembly/Origin)
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MJD3x0,NJVMJD3x0T4G(Datasheets)

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