Transistor Type:
PNP
Dimensions:
0.94 x 2.9 x 1.3mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Saturation Voltage:
0.65 V
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
30 V
Maximum Base Emitter Saturation Voltage:
0.9 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
BC858
Detailed Description:
Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300mW Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce:
220 @ 2mA, 5V
Transistor Type:
PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
300mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
Manufacturer:
ON Semiconductor
