Transistor Type:
PNP
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
540 mW
Maximum Collector Emitter Saturation Voltage:
-0.03 V
Maximum Collector Base Voltage:
-80 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
-0.9 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
-7 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
2 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
15 Weeks
Base Part Number:
NSS602
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 2A 100MHz 460mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 500mA, 2V
Transistor Type:
PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
220mV @ 200mA, 2A
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
460mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
